一、个人基本信息
刘燕丽，女，博士，教授，毕业于南京大学微电子学与固体电子学专业。目前主要从事半导体材料、半导体功率器件以及传感器等方面的研究工作，主持国家自然科学基金、山东省自然科学基金、山东省高等学校科技计划、烟台市科技计划等纵向课题多项，发表SCI论文30余篇。
联系方式：邮箱yanliliu@sdtbu.edu.cn；手机：15762708871；QQ：2363415063
二、主持科研项目
[1] 国家自然科学基金 “用于消毒副产物检测的N极性面GaN基复合背势垒异质结HEMT传感器研究”，项目负责人
[2] 山东省自然科学基金 “用于重金属离子检测的GaN基异质结构传感器研究”，项目负责人
[3] 山东省高等学校科技计划“N极性面GaN基HEMT传感器及其在饮用水检测中的应用研究”，项目负责人
[4] 烟台市科技创新发展计划“面向海洋污染物检测的新型InAlN/GaN微电子化学传感器研究”，项目负责人
[5] 烟台市科创助力新旧动能转换课题“基于氮化物高电子迁移率晶体管的水体污染在线监测”项目负责人
三、代表性论文
1. Liu Yanli, Liu Yue, Guo Haiqiu, Li Yuan, Ma Yuzhen, Shen Hui, Chen Dunjun, Hu Xiaolin, Enhancement of Sensing Performance of GaN-Based MOS-HEMT Biosensors by Graded AlGaN Barrier, IEEE Sensors Journal, 2024, 24: 23470-23479
2. Liu Yanli, Chen Dunjun, Wei Guangfen, Lin Zhonghai, He Aixiang , Li Meihua, Wang Pingjian, Lu Hai, Zhang Rong, Zheng Youdou, Temperature-dependent ultraviolet Raman scattering and anomalous Raman phenomenon of AlGaN/GaN heterostructure, Optics Express, 2019, 27: 4781-4788
3. Liu Yue, Ma Yuzhen, Guo Haiqiu, Fu Su, Liu Yuhui, Wei guangfen, Liu Yanli(通讯), Hao Yaming, Chen Dunjun, Journal of Physics D: Applied Pysics, 2024, 57: 075107
4.刘燕丽，王伟，董燕，陈敦军，张荣，郑有炓，结构参数对N极性面GaN/InAlN高电子迁移率晶体管性能的影响，物理学报，2019. 68: 247203
5. Liu Yanli, He Xiao, Dong Yan, Fu Su, Liu Yuhui, Chen Dunjun, The Sensing Mechanism of InAlN/GaN HEMT, Crystals, 2022, 12: 401
6. Liu Yanli, Yang Lianhong, Chen Dunjun, Zhang Li, Lu Hai, Zhang Rong, Zheng Youdou, The study of near-resonance Raman scattering of AlInN/AlN/GaN heterostructure, Superlattices and Microstructures, 2015, 83: 353-360
7.Liu Yanli, Chen Dunjun, Xue Junjun, Liu Bin, Lu Hai, Zhang Rong, Zheng Youdou, Xu Ke, Zhang Jinping, Cui Bentao, Wowchak Andrew M, Dabiran Amir M, High-indium-content InGaN quantum-well structure grown pseudomorphically on a strain-relaxed InGaN template layer, Journal of Vacuum Science & Technology B, 2012, 30: 030603
8. Liu, Yanli, Chen, Dunjun, Yang, Lianhong, Lu Hai, Zhang Rong, Zheng Youdou, A method of applying compressive pre-stress to AlGaN barrier inAlGaN/GaN heterostructures by depositing an additional thermally mismatched dielectric, Physica Status Solidi A-Applications and Materials Science, 2016, 213: 2474-2478
9. Liu Yanli, Yang Xifeng, Chen Dunjun, Lu Hai, Zhang Rong, Zheng Youdou, Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering , A dvances in Condensed Matter Physics, 2015, 2015: 918428
10. Liu Yanli, Chen Dunjun, Dong Kexiu, Lu Hai, Zhang Rong, Zheng Youdou, Zhu Zhilin, Wei Guangfen, Lin Zhonghai, Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure, Advances in Condensed Matter Physics, 2018, 2018: 1-4
